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| PNP BCY78 - BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VEBO IC IB PD PD TJ TStg Ratings Collector-Emitter Voltage (IB =0) Collector-Emitter Voltage (VBE =0) Emitter-Base Voltage (IC =0) Collector Current Base Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25 @ Tcase= 45 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 Value -45 -32 -45 -32 -5 -5 -200 -20 390 1 200 -65 to +150 Unit V V V mA mA mW Watts C C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air BCY79 BCY78 BCY79 BCY78 Value 450 150 Unit C/W C/W COMSET SEMICONDUCTORS 1/4 PNP BCY78 - BCY79 ELECTRICAL CHARACTERISTICS Tj=25C unless otherwise specified Symbol ICES ICES IEBO VCEO VEBO VCE(SAT) Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCB =-35 V, VBE =0V VCB =-25 V, VB =0V VCB =-35 V VBE =0V,Tj =150C VCB =-25 V VBE =0V,Tj =150C VBE =-4.0 V, IC =0 Min Typ -0.12 -04 -0.7 -0.85 -0.55 -0.65 -0.68 -0.75 BCY79IX BCY78IX >40 Typ.270 >250 <460 >160 <630 >60 >250 <500 Mx -20 -10 -20 -0.25 -08 Unit nA A nA V V BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 -45 -32 -5 -0.6 -0.7 -0.6 - Collector Emitter Breakdown IC =-2 mA, IB =0 Voltage Emitter Base Breakdown IE =-1A, IC =0 Voltage Collector-Emitter saturation Voltage IC =-10 mA, IB =-0.25 mA IC =-100 mA, IB =-2.5 mA IC =-10 mA, I B=-0.25 mA IC =-100 mA, IB =-2.5 mA IC =-10 A, VCE =-5 V IC =-2 mA, VCE =-5 V V -0.85 -1.2 -0.75 V BCY79X BCY78X >100 Typ.390 >380 <630 >240 <1000 >60 >350 <700 VBE(SAT) Base-Emitter Saturation Voltage VBE Base-Emitter Voltage IC =-10 mA, VCE =-1 V IC =-100 mA, VCE =-1 V IC =-10 A, VCE =-5 V hFE DC Current Gain IC =-2 mA, VCE =-5 V IC =-10 mA, VCE =-1 V hfe Small-Signal Current Gain IC =-100 mA, VCE =-1 V IC =2 mA, VC E=5 V f = 1kHz BCY79VII BCY78VII Typ.140 >120 <220 >80 >40 >125 <250 BCY79VIII BCY78VIII >30 Typ.200 >180 <310 >120 <400 >45 >175 <350 COMSET SEMICONDUCTORS 2/4 PNP BCY78 - BCY79 Symbol fT F td tr ton ts tf toff td tr ton ts tf toff CC CE Ratings Transition frequency Noise figure , RS=2k Delay time Rise time Turn on time Storage time Fall time Turn off time Delay time Rise time Turn on time Storage time Fall time Turn off time Collector capacitance Emitter capacitance Test Condition(s) IC =-10 mA, VCE =-5 V f = 100MHz IC =-200 A, VCE =-5 V f = 1kHz, B =200Hz Min - Typ Mx 180 2 35 50 85 400 80 480 5 50 55 250 200 450 6 150 Unit MHz db ICon =-10 mA IBon = -IBoff = -1mA VBB =3.6 V R1= R2 = 5k RL = 990 ICon =-100 mA IBon = -IBoff = -10mA VBB =5 V R1= 500 R2 = 700 RL = 98 IE = Ie = 0 ,VCB =-10 V f = 1MHz IC = Ic = 0 ,VEB =-0.5 V f = 1MHz BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 ns 800 150 ns 800 5 15 pF pF COMSET SEMICONDUCTORS 3/4 PNP BCY78 - BCY79 MECHANICAL DATA CASE TO-18 DIMENSIONS mm A B D E F G H I L 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45 inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45 Pin 1 : Pin 2 : Pin 3 : emitter base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 4/4 |
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